Behavior-level simulation of the total dose effect of an electronic system

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MA Wuying, HE Baoping, LIU Linyue, GUO Hongxia, OUYANG Xiaoping

Abstract

To explore the application of a behavior-level simulation method in the study of the total dose effect of an electronic system, this paper first proposes a behavior-level simulation method based on the VHDL-AMS language in different dimensions, considering operational amplifiers, comparators, and analog-to-digital converters, as the research subjects and subsequently verifying the model accuracy. In addition, according to the interconnection among devices, circuits, and modules, the behavior-level simulation model of the total dose effect of a typical electronic system is constructed, realizing the simulation of the total dose effect. The result is in good agreement with the experimental results. The behavior-level-based simulation modeling can simplify the difficulty of modeling the total dose effect of a system, realizing a suitable radiation-sensitive positioning of the system and reproduction of the damage law. It has good application value, providing technical support for the radiation-resistant reinforcement design and radiation-resistant performance prediction of the space electronic system.

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